According to IMARC Group’s latest report, titled “GaN Power Device Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2021-2026”, the global GaN power device market is expected to grow at a CAGR of around 19% during 2021-2026. The gallium nitride (GaN) power device refers to a wide bandgap semiconductor that is used for high-efficiency power transistors and integrated circuits. This high electron mobility transistor (HEMT) is produced by combining a thin layer of aluminum gallium nitride (AIGan) and GaN crystal, which induces a two-dimensional electron gas (2DEG). As compared to silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET), the GaN power device offers higher breakdown strength, faster-switching speed, stronger thermal conductivity, and lower on-resistance. Apart from this, GaN devices improve efficiency and reduce the costs of power conservation systems.

We are regularly tracking the direct effect of COVID-19 on the market, along with the indirect influence of associated industries. These observations will be integrated into the report.

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Market Trends and Drivers:

The GaN power device market is primarily being driven by the widespread product application in the automotive sector to be utilized in the lighting and braking control systems of electric vehicles (EVs) and hybrid electric vehicles (HEVs). Moreover, GaN power devices are employed in radars to improve navigation and facilitate real-time air traffic, which is catalyzing the market growth. Additionally, these devices are extensively utilized in the manufacturing of healthcare scanning and diagnostic equipment and wireless charging technologies, which is positively influencing the market growth. Besides this, the integration of the internet of things (IoT) and fifth generation (5G) technology is acting as another growth-inducing factor.

GaN Power Device Market 2021-2026 Competitive Analysis and Segmentation:

Competitive Landscape With Key Players:

The competitive landscape of the GaN power device market has been studied in the report with the detailed profiles of the key players operating in the market.

Some of these key players include:

  • Efficient Power Conversion
  • GaN Systems Inc.
  • IQE
  • Koninklijke Philips N.V.
  • MACOM Technology Solutions
  • Microsemi Corporation (Microchip Technology Inc.)
  • Mitsubishi Electric Corporation
  • Navitas Semiconductor Inc.
  • Qorvo Inc.
  • Sumitomo Electric Industries Ltd.
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • Wolfspeed Inc. (Cree Inc.)

Key Market Segmentation:

The report has segmented the global GaN power device market on the basis of device type, voltage range, application, end-use industry and region.

Breakup by Device Type:

  • Power Device
    • Discrete Power Device
    • Integrated Power Device
  • RF Power Device
    • Discrete RF Power Device
    • Integrated RF Power Device

Breakup by Voltage Range:

  • <200 Volt
  • 200–600 Volt
  • >600 Volt

Breakup by Application:

  • Power Drives
  • Power Supply Systems
  • Radio Frequency Based Systems

Breakup by End-Use Industry:

  • Telecommunications
  • Automotive
  • Renewable Power Generation
  • Military
  • Aerospace and Defense
  • Consumer Electronics
  • Others

Breakup by Region:

  • North America
  • Asia Pacific
  • Europe
  • Latin America
  • Middle East and Africa

Explore Full Report with TOC & List of Figure:

Key Highlights of the Report:

  • Market Performance (2015-2020)
  • Market Outlook (2021-2026)
  • Porter’s Five Forces Analysis
  • Market Drivers and Success Factors
  • SWOT Analysis
  • The Impact of COVID-19 on the Global Market
  • Value Chain Analysis
  • Structure of the Global Market
  • Comprehensive mapping of the competitive landscape

If you need specific information that is not currently within the scope of the report, we will provide it to you as a part of the customization.

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